Mask Alignment Checker
Overlay metrology system MAC-R

MAC-R is the go-to overlay metrology system for production of power devices and legacy semiconductors.
It provides excellent performance for a low price compared with similar systems.
It provides excellent performance for a low price compared with similar systems.
- Wafer sizes: 3-inch, 4-inch, 5-inch, 6-inch, 8-inch
- Proven in mass production lines
- The MAC series has more than 200 sales in total in Japan
- MAC is a trusted brand
Advantage1 Cost performance
Low price & low running cost
We create sufficient specifications by perfecting our target product, resulting in prices lowered by half in comparison to our old model.
MAC-R has few consumption parts, allowing low expenses for maintenance and can largely compress running costs.
We create sufficient specifications by perfecting our target product, resulting in prices lowered by half in comparison to our old model.
MAC-R has few consumption parts, allowing low expenses for maintenance and can largely compress running costs.
Advantage2 Space-saving
Minimum footprint: W 1300 mm x D 1300 mm
Space-saving design of around four pieces of grating floorboards.
Its small footprint allows greater flexibility in designing new production lines.
MAC-R can also replace its old models in existing lines without the need to relocate other equipment, since its size is kept unchanged from the predecessors.
Space-saving design of around four pieces of grating floorboards.
Its small footprint allows greater flexibility in designing new production lines.
MAC-R can also replace its old models in existing lines without the need to relocate other equipment, since its size is kept unchanged from the predecessors.
Advantage3 Various wafers
It accommodates wafers in a variety of sizes (including small diameters) and materials (SiC, GaN, sapphire etc.)
Wafer specifications can be changed after delivery.
Wafer sizes | 2-inch, 3-inch, 4-inch, 5-inch, 6-inch, 8-inch (Wafer size differences up to 2 inches can be handled by one unit.) |
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Wafer materials | Si, SiC, GaN, GaAs, quartz, sapphire |
Measurement repeatability (3σ) | ≤ 7.0 nm ※R to R ≤ 3.0 nm |
TIS (average) | ≤ ±7.0 nm |
Throughput | 100 wafers/h or more (in case of consecutively measuring 5 points in a wafer) |
Dimensions | 1300 mm (W) x 1300 mm (D) x 1460 mm (H) |
Weight | 800 kg |
